Schottky Barrier Diode
RB530VM-30
Applications General rectification
Dimensions (Unit : mm)
1.25±0.1
0.1±0.1 ...
Schottky Barrier Diode
RB530VM-30
Applications General rectification
Dimensions (Unit : mm)
1.25±0.1
0.1±0.1 0.05
Datasheet
Land size figure (Unit : mm) 0.9MIN.
1.7±0.1 2.5±0.2
0.8MIN. 2.1
Features 1)Ultra small mold type. (UMD2) 2)High reliability
Construction Silicon epitaxial planer
0.3±0.05
0.7±0.2 0.1
ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A
dot (year week factory)
UMD2 Structure
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
0.3±0.1
3.5±0.05 1.75±0.1 2.75
8.0±0.2 2.8±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current
VRM VR Io
Forward current surge peak (60Hz・1cyc)
Junction temperature
IFSM Tj
Storage temperature
Tstg
1.40±0.1
4.0±0.1
φ1.05
Limits 30 30 100 500 150
40 to 150
Unit V V mA mA C C
1.0±0.1
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF -
- 0.45
Reverse current
IR - - 0.5
Unit Conditions
V IF=10mA μA VR=10V
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1/4
2015.04 - Rev.B
RB530VM-30
Data Sheet
FORWARD CURRENT:IF(mA)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100
Ta=125°C 10
Ta=75°C 1
Ta=25°C
0.1
0.01 0
Ta=25°C
100 200 300 400 500
FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
600
100 f=1MHz
10
1 0
400 300 200 100
0
5 10 15
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
20
Ta=25°C VR=10V n=30pcs
AVE:129.0nA IR DISPERSION MAP
CAPACITAN...