RB161SS-20

Data Sheet Schottky Barrier Diode RB161SS-20 lApplications Small current rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.8 1.6 ±0.05 1.2 ±0.05 0.5 0.4 ±0.05 lFeatures 1)Small power mold type (KMD2) 2)High reliability 3)Low VF 0 ～0.03 KMD2 0.8 ±0.05 0.6 ±0.03 0.7 ±0.05 lConstruction Silicon epitaxial planer ROHM : KMD2 JEDEC :JEITA : dot (year week factory) lStructure lTaping dimensions (Unit : mm) www.DataSheet.co.kr lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak 　(60Hz･1cyc.) Junction temperature Tj Storage temperature Tstg Limits 30 20 1 5 125 -40 to +125 Unit V V A A C C lElectrical characteristics (Ta=25C) Parameter Symbol VF1 Forward Voltage VF2 Reverse Current IR Min. - Typ. 0.33 0.38 0.20 Max. 0.37 0.42 1.00 Unit V V mA Conditions IF=0.7A IF=1.0A VR=20V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ 1.2 RB161SS-20 　 Data Sheet 10 1000000 Tj=150°C 100000 FORWARD CURRENT:IF(A) Tj=150°C 1 Tj=125°C Tj=25°C 0.1 Tj=75°C REVERSE CURRENT:IR(mA) 10000 Tj=75°C 1000 Tj=125°C Tj=25°C 100 0.01 0 200 400 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 0 5 10 15 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz Tj=25°C FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 500 Tj=25°C IF=1.0A ...