RB160SS-40

Data Sheet Schottky Barrier Diode RB160SS-40 lApplications Small current rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.8 1.6 ±0.05 1.2 ±0.05 0.5 0.4 ±0.05 lFeatures 1)Small power mold type (KMD2) 2)High reliability 3)Low IR 0 ～0.03 KMD2 0.8 ±0.05 0.6 ±0.03 0.7 ±0.05 lConstruction Silicon epitaxial planer ROHM : KMD2 JEDEC :JEITA : dot (year week factory) lStructure lTaping dimensions (Unit : mm) www.DataSheet.co.kr lAbsolute maximum ratings (Ta=25C) Parameter Limits Symbol VRM Reverse voltage (repetitive peak) 40 VR Reverse voltage (DC) 40 Average rectified forward current (*1) 1 Io IFSM Forward current surge peak(60Hz･1cyc.) 5 Junction temperature 150 Tj Storage temperature -40 to +150 Tstg (*1) On the Glass epoxy substrate , 180°Half Sine wave lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current IR Unit V V A A C C Min. - Typ. 0.50 3.00 Max. 0.55 50.00 Unit V μA Conditions IF=0.7A VR=40V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ 1.2 RB160SS-40 　 Data Sheet 10 10000 Tj=150°C 1000 FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(mA) 1 Tj=150°C Tj=125°C Tj=25°C Tj=75°C Tj=125°C 100 Tj=75°C 10 0.1 1 Tj=25°C 0.01 0 200 400 600 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.1 0 10 20 30 40 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz Tj=25°C FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:...