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RB068L100

Rohm

Schottky Barrier Diode

Data Sheet Schottky Barrier Diode RB068L100 lApplications General rectification lDimensions (Unit : mm) lLand size figu...


Rohm

RB068L100

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Data Sheet Schottky Barrier Diode RB068L100 lApplications General rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 2.0 2.0 2.6±0.2 lFeatures 1)Small power mold type. (PMDS) 2)High reliability. 3)Low IR. 4.5±0.2 1.2±0.3 2 ① 2 ② 0.1±0.02     0.1 5.0±0.3 1.5±0.2 2.0±0.2 PMDS lConstruction Silicon epitaxial planer ROHM : PMDS JEDEC : SOD-106 Manufacture Date ① ② lStructure lTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 0.3 www.DataSheet.co.kr 5.5±0.05 1.75±0.1 φ 1.55 2.9±0.1 4.0±0.1 2.8MAX lAbsolute maximum ratings (Ta=25C) Parameter Limits Symbol VRM Reverse voltage (repetitive) 100 VR Reverse voltage (DC) 100 Average rectified forward current (*1) 2 Io IFSM Forward current surge peak (60Hz・1cyc) 60 Junction temperature 150 Tj Storage temperature -40 to +150 Tstg (*1)Mounted on epoxy board,60Hz half sine wave, Tc=83°C Max. lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current IR Unit V V A A C C Min. - Typ. - Max. 0.80 50 Unit V μA IF=2.0A VR=100V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5.3±0.1 0.05   9.5±0.1 Conditions 1/4 2011.10 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ 12±0.2 4.2 RB068L100   Data Sheet 10 Tj=150°C REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) 1 Tj=125°C Tj=75°C 0.1 Tj=25°C 0.01 1000 Tj=150°C 100 Tj=75°C 10 Tj=125°C 1 Tj=25°C 0.1 Tj=-40°C 0.01 Tj=-40°C 0.001 0 200 400 600 800 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0...




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