Data Sheet
Schottky Barrier Diode
RB068L100
lApplications General rectification lDimensions (Unit : mm) lLand size figu...
Data Sheet
Schottky Barrier Diode
RB068L100
lApplications General rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 2.0 2.0
2.6±0.2
lFeatures 1)Small power mold type. (PMDS) 2)High reliability. 3)Low IR.
4.5±0.2
1.2±0.3
2 ①
2 ②
0.1±0.02 0.1
5.0±0.3
1.5±0.2
2.0±0.2
PMDS
lConstruction Silicon epitaxial planer
ROHM : PMDS JEDEC : SOD-106 Manufacture Date ① ②
lStructure
lTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05 φ 1.55±0.05 0.3
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5.5±0.05
1.75±0.1
φ 1.55 2.9±0.1 4.0±0.1 2.8MAX
lAbsolute maximum ratings (Ta=25C) Parameter Limits Symbol VRM Reverse voltage (repetitive) 100 VR Reverse voltage (DC) 100 Average rectified forward current (*1) 2 Io IFSM Forward current surge peak (60Hz・1cyc) 60 Junction temperature 150 Tj Storage temperature -40 to +150 Tstg (*1)Mounted on epoxy board,60Hz half sine wave, Tc=83°C Max. lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current IR
Unit V V A A C C
Min. -
Typ. -
Max. 0.80 50
Unit V μA IF=2.0A VR=100V
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5.3±0.1 0.05 9.5±0.1
Conditions
1/4
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
12±0.2
4.2
RB068L100
Data Sheet
10 Tj=150°C REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) 1 Tj=125°C Tj=75°C 0.1 Tj=25°C 0.01
1000
Tj=150°C
100 Tj=75°C
10
Tj=125°C
1
Tj=25°C
0.1 Tj=-40°C
0.01 Tj=-40°C 0.001 0 200 400 600 800 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0...