RB061US-30

Data Sheet Schottky Barrier Diode RB061US-30 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) Features 1)Small power mold type. (TSMD8) 2)Low VF 3)High reliability ● TSMD8 Structure Silicon epitaxial planer ROHM : TSMD8 Manufacture Date ● 1pin mark Structure (7) (6) (5) (8） （1） （2（ ）3） （4） Taping dimensions (Unit : mm) www.DataSheet.co.kr Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Tj Storage temperature Tstg (*1)Mounted on epoxy board. 180° Half sine wave Electrical characteristics (Ta=25°C) Parameter Symbol VF1 Forward voltage VF2 Reverse current Capacitance between terminal Reverse recovery time IR Ct trr Limits 30 30 2 8 125 - 40 to +125 Unit V V A A °C °C Min. - Typ. 0.30 0.35 280 80 - Max. 0.35 0.40 900 20 Unit V V μA pF ns IF=1.0A IF=2.0A VR=15V Conditions VR=20V, f=1MHz IF=0.5A, IR=1A, Irr=0.25*IR www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.09 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ RB061US-30 　 Data Sheet 10 Ta=75°C Ta=125°C FORWARD CURRENT:IF(A) 1 REVERSE CURRENT:IR(mA) 1000 Ta=125°C 100 10 Ta=75°C 0.1 Ta=25°C 0.01 Ta=−25°C 1 Ta=25°C 0.1 Ta=−25°C 0.01 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.001 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHA...