RAF040P01

Data Sheet 1.5V Drive Pch MOSFET RAF040P01  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) TUMT3 0.2Max. Features 1) Low on-resistance. 2) Low voltage drive(1.5V drive). 3) Small surface mount package(TUMT3). Abbreviated symbol : SF  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RAF040P01 Taping TCL 3000   Inner circuit (3) ∗2 ∗1 www.DataSheet.co.kr (1) Gate (2) Source (3) Drain (1) (2) 1 ESD PROTECTION DIODE 2 BODY DIODE  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Limits 12 0to8 4 *1 Unit V V A A A A W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP IS ISP PD Tch Tstg 16 0.6 16 0.8 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 156 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ RAF040P01  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay...