Document
Data Sheet
10V Drive Nch MOSFET
R6020ANZ
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TO-3PF
4.5
5.5 15.5 φ3.6
10.0
3.0
0.75
Application Switching
(1) Gate (2) Drain (3) Source
14.8
(1)
(2)
2.5
Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD.
26.5
16.5 14.5
0.44
16.5
3.5
2.0
2.0 3.0
2.0
(3)
0.9
5.45
5.45
Packaging specifications Type R6020ANZ Package Code Basic ordering unit (pieces) Bulk 360
Inner circuit
∗1
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Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25°C
(1) Gate (2) Drain (3) Source
(1)
(2)
(3)
1 BODY DIODE
Limits 600 30 20 80 20 80 10 26.7 120 150 55 to 150
Unit V V A A A A A mJ W C C
VDSS Continuous Pulsed Continuous Pulsed VGSS ID *3 IDP IS ISP IAS
*1 *3 *1 *2
EAS *2 PD *4 Tch Tstg
*3 Limited only by maximum channel temperature allowed. *4 TC=25°C
Thermal resistance Parameter Channel to Case
* T C=25°C
Symbol Rth (ch-c) *
Limits 1.04
Unit C / W
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1/5
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
R6020ANZ
Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
*Pulsed
Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 600 2.95 7 Typ. 0.17 2040 1660 70 40 60 230 70 65 10 25 Max. 100 100 4.15 0.22 Unit nA V A V S pF pF pF ns ns ns ns nC nC nC Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA ID=10A, VGS=10V VDS=10V, ID=10A VDS=25V VGS=0V f=1MHz VDD 300V, ID=10A VGS=10V RL=30 RG=10 VDD 300V ID=20A VGS=10V
Data Sheet
Drain-source breakdown voltage V(BR)DSS
Body diode characteristics (Source-Drain) Parameter Forward voltage
*Pulsed
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Symbol VSD *
Min. -
Typ. -
Max. 1.5
Unit V
Conditions Is=20A, VGS=0V
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2/5
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
R6020ANZ
Electrical characteristic curves
Data Sheet
Fig.1 Maximum Safe Operating Aera 100 PW =100us 40 35 DRAIN CURRENT : ID (A) DRAIN CURRENT: ID (A) 10 PW = 10ms 1 Operation in this area is limited by RDS(ON) Ta = 25°C Single Pulse 0.01 0.1 1 10 100 1000 DRAIN-SOURCE VOLTAGE : VDS ( V ) PW =1ms 30 25 20
Fig.2: Typical output characteristics(Ⅰ) VGS=10V VGS=8.0V VGS=6.5V DRAIN CURRENT: ID (A) 20
Fig.3: Typical output characteristics(Ⅱ) Ta= 25°C Pulsed 15
VGS=10V VGS=8.0V VGS=7.0V VGS=5.5V
VGS=7.0V
VGS=6.0V Ta= 25°C Pulsed
VGS=6.5V 10 VGS=6.0V VGS=5.0V 5 VGS= 4.5V 0
VGS=5.5V 15 10 5 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE: VDS (V) VGS=5.0V VGS= 4.5V
0.1
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.4 Typical Transfer Characteristics GATE THRESHOLD VOLTAGE: VGS(th) (V) 100 VDS= 10V Pulsed DRAIN CURRENT : ID (A) 10 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 6
Fig.5 Gate Threshold Voltage vs. Channel Temperature 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VDS= 10V ID= 1mA
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
5 4 3 2 1 0 -50
VGS= 10V Pulsed
1
Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃
1
0.1
0.1
0.01 0 1 2 3 4 5 6 7
0
50
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100
150
0.01 0.001
0.1
10
GATE-SOURCE VOLTAGE : VGS (V)
CHANNEL TEMPERATURE: Tch (°C)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage 0.5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) Ta=25°C Pulsed 0.4 0.5
Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature 100 VGS= 10V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| (S)
Fig.9 Forward Transfer Admittance vs. Drain Current
VDS= 10V Pulsed 10
0.4
0.3 ID=20A 0.2 ID=10A 0.1
0.3
ID= 20A
1
0.2
ID= 10A
0.1
0.1
0.01
Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃
0 0 5 10 15 GATE-SOURCE VOLTAGE : VGS (V)
0 -50
0
50
100
150
0.001 0.001
0.01
0.1
1
10
100
CHANNEL TEMPERATURE: Tch (°C)
DRAIN CURRENT : ID (A)
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
3/5
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
R6020ANZ
Data Sheet
Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 100 VGS= 0V Pulsed SOURCE CURRENT : IS (A) 10 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ CAPACITANCE : C (pF) 1000 10000
Fig.11 Typical Capacitance vs. Drain-Source Voltage 10 Ciss GATE-SOURCE VOLTAGE : VGS (V)
Fig.12 Dynamic Input Characteristics
1
1.