R6012FNX

Data Sheet 10V Drive Nch MOSFET R6012FNX  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage 　 VGSS garanteed to be ±30V . 5) Drive circuits can be simple. 6) Parallel use is easy. 14.0 2.5 Features 1) Fast reverse recovery time (trr) 15.0 12.0 8.0 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 Application Switching  Inner circuit Packaging specifications Type R6012FNX Package Code Basic ordering unit (pieces) Bulk 500  ∗1 www.DataSheet.co.kr (1) (2) (3) (1) Gate (2) Drain (3) Source 1 BODY DIODE Absolute maximum ratings (Ta  25°C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Power dissipation (Tc=25C) Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L≒ 500H, VDD=50V, Rg=25 ,starting Tch=25°C *3 Limited only by maximum temperature allowed. Limits 600 30 Unit V V A A A A A mJ W C C VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg *3 *1 *3 *1 *2 *2 12 48 12 48 6 9.6 50 150 55 to 150  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 2.5 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ R6012FNX  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate v...