64Kb Serial Low Energy F-RAM Memory
Preliminary
FM25e64
64Kb Serial Low Energy F-RAM Memory FEATURES
64K bit Ferroelectric Nonvolatile RAM Organized as 8...
Description
Preliminary
FM25e64
64Kb Serial Low Energy F-RAM Memory FEATURES
64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion (1012) Read/Writes 36 Year Data Retention at +75ºC NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Fast SPI Interface Up to 20 MHz Frequency SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Software Write-Protection (BP bits) Hardware Write-Protect (/WP pin) Active-Low RESET Input Holds Device in Reset State While Power Supply Stabilizes Reduces Time to First F-RAM Access Allows Freedom of Power Supply Ramp Rates Low Voltage/ Low Energy Consumption VDD = 1.8V ±0.1V (-1 version) VDD = 1.5V +0.15V, -0.1V (-2 version) 20 A (typ.) Active Current at 1 MHz 0.1 A (typ.) Standby Current Industry Standard Configuration Industrial Temperature -40C to +85C 8-pin “Green”/RoHS SOIC Package
DESCRIPTION
The FM25e64 is a low voltage, low energy 64-kilobit nonvolatile memory employing an advanced F-RAM process. It provides reliable data retention for 36 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM25e64 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers su...
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