FM25e64

Preliminary FM25e64 64Kb Serial Low Energy F-RAM Memory FEATURES 64K bit Ferroelectric Nonvolatile RAM  Organized as 8,192 x 8 bits  High Endurance 1 Trillion (1012) Read/Writes  36 Year Data Retention at +75ºC  NoDelay™ Writes  Advanced High-Reliability Ferroelectric Process Fast SPI Interface  Up to 20 MHz Frequency  SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  Software Write-Protection (BP bits)  Hardware Write-Protect (/WP pin) Active-Low RESET Input  Holds Device in Reset State While Power Supply Stabilizes  Reduces Time to First F-RAM Access  Allows Freedom of Power Supply Ramp Rates Low Voltage/ Low Energy Consumption  VDD = 1.8V ±0.1V (-1 version)  VDD = 1.5V +0.15V, -0.1V (-2 version)  20 A (typ.) Active Current at 1 MHz  0.1 A (typ.) Standby Current Industry Standard Configuration  Industrial Temperature -40C to +85C  8-pin “Green”/RoHS SOIC Package DESCRIPTION The FM25e64 is a low voltage, low energy 64-kilobit nonvolatile memory employing an advanced F-RAM process. It provides reliable data retention for 36 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM25e64 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers su...