New Product
VF30M120C
www.vishay.com
Vishay General Semiconductor
Ultra Low VF = 0.52 V at IF = 5 A
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
ITO-220AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
1 VF30M120C
PIN 1 PIN 3 PIN 2
2
3
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max. 2 x 15 A 120 V 150 A 0.68 V 150 °C
MECHANICAL DATA
Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per
www.DataSheet.co.kr
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) IFSM dV/dt VAC TJ, TSTG SYMBOL VRRM VF30M120C 120 30 15 150 10 000 1500 - 40 to + 150 V/μs V °C A UNIT V
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rating of change (rated VR) Isolation voltage from termal to heatsink t = 1 min Operating junction and storage temperature range
Revision: 11-Jan-12
Document Number: 89470 1 For technical questions within your region:
[email protected],
[email protected],
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
New Product
VF30M120C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS IF = 5 A IF = 7.5 A Instantaneous forward voltage per diode IF = 15 A IF = 5 A IF = 7.5 A IF = 15 A VR = 90 V Reverse current per diode VR = 120 V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 20 ms TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C IR (2) TA = 125 °C TA = 25 °C VF (1) SYMBOL TYP. 0.60 0.67 0.87 0.52 0.57 0.68 3.5 2 5 MAX. 0.98 0.76 800 27 μA mA μA mA V UNIT
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Typical thermal resistance per diode SYMBOL RθJC VF30M120C 4.5 UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE ITO-220AB PREFERRED P/N VF30M120C-M3/4W UNIT WEIGHT (g) 1.75
www.DataSheet.co.kr
PACKAGE CODE 4W
BASE QUANTITY 50/tube
DELIVERY MODE Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
40
14.0
Resistive or Inductive Load
35
12.0
D = 0.5 D = 0.3 D = 0.2 D = 0.1
D = 0.8
30 25 20 15 10 5
Average Power Loss (W)
10.0 8.0 6.0
D = 1.0
T
4.0 2.0 0.0
Mounted on Specific Heatsink
0 0 25 50 75 100 125 150 175
D = tp/T
0 2 4 6 8 10 12 14
tp
16 18
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 11-Jan-12
Document Number: 89470 2 For technical questions within your region:
[email protected],
[email protected],
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
New Product
VF30M120C
www.vishay.com
100 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000
Vishay General Semiconductor
Instantaneous Forward Current (A)
TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C
Junction Capacitance (pF)
100
0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
10 0.1 1 10 100
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Instantaneous Reverse Current (mA)
Transient Thermal Impedance (°C/W)
100 10 1 0.1 0.01 TA = 25 °C 0.001 0.0001 20 40 60 80 100 TA = 150 °C TA = 125 °C TA = 100 °C
10 Junction to Case
1
www.DataSheet.co.kr
0.1 0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF.
7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54)
45° REF.