VBT4045BP

VBT4045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A FEATURES TO-263AB K Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 Compliant to RoHS Directive 2011/65/EU 1 TYPICAL APPLICATIONS PIN 1 PIN 2 K HEATSINK For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(DC) VRRM IFSM VF at IF = 40 A TOP max. (AC mode) TJ max. (DC forward current) 40 A 45 V 240 A 0.51 V 150 °C 200 °C Case: TO-263AB Epoxy meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked www.DataSheet.co.kr per Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum DC forward bypassing current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction temperature range (AC mode) Junction temperature in DC forward current without reverse bias, t  1 h SYMBOL VRRM IF(DC) (1) VBT4045BP 45 40 240 - 40 to + 150  200 UNIT V A A °C °C IFSM TOP TJ (1) Notes (1) With hea...