New Product
V20120C, VF20120C, VB20120C & VI20120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TMBS ®
TO-220AB ITO-220AB
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
1 2 3 VI20120C
2 V20120C
PIN 1 PIN 3 PIN 2 CASE
3 1 VF20120C
PIN 1 PIN 3 PIN 2
2
3
1
TO-263AB K K
TO-262AA
2 1 VB20120C
PIN 1 PIN 2 K HEATSINK
MECHANICAL DATA
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PIN 1 PIN 3
PIN 2 K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 120 V 120 A 0.64 V 150 °C
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode SYMBOL VRRM IF(AV) IFSM EAS IRRM dV/dt VAC TJ, TSTG V20120C VF20120C VB20120C VI20120C UNIT V A A mJ A V/µs V °C 120 20 10 120 80 0.5 10 000 1500 - 40 to + 150
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR) Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range
Document Number: 89040 Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
www.vishay.com 1
Datasheet pdf - http://www.DataSheet4U.net/
New Product
V20120C, VF20120C, VB20120C & VI20120C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 mA IF = 5 A IF = 10 A IF = 5 A IF = 10 A VR = 90 V Reverse current per diode (2) VR = 120 V Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms TA = 25 °C TA = 25 °C VF TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VBR TYP. 120 (minimum) 0.62 0.81 0.54 0.64 8 6 IR 14 MAX. 0.90 V 0.72 700 45 µA mA µA mA UNIT V
Instantaneous forward voltage per diode (1)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Typical thermal resistance per diode SYMBOL RθJC V20120C 2.8 VF20120C 5.0 VB20120C 2.8 VI20120C 2.8 UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-262AA PREFERRED P/N V20120C-E3/4W VF20120C-E3/4W VB20120C-E3/4W VB20120C-E3/8W VI20120C-E3/4W UNIT WEIGHT (g) 1.88 1.75 1.37 1.37 1.45 PACKAGE CODE
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BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube
DELIVERY MODE Tube Tube Tube Tape and reel Tube
4W 4W 4W 8W 4W
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
25 10 Resistive or Inductive Load V(B,I)20120C D = 0.5 D = 0.3 6 D = 0.2 4 D = 0.1 T 2 D = tp/T 0 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 tp D = 1.0 D = 0.8
Average Forward Rectified Current (A)
15
VF20120C
10
5 Mounted on Specific Heatsink 0
Average Power Loss (W)
20
8
Case Temperature (°C)
Average Forward Current (A)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
Document Number: 89040 Revision: 24-Jun-09
Datasheet pdf - http://www.DataSheet4U.net/
New Product
V20120C, VF20120C, VB20120C & VI20120C
Vishay General Semiconductor
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
Junction to Case
TA = 150 °C TA = 125 °C TA = 100 °C
10
1 TA = 25 °C
V(B,I)20120C 1 0.01 0.1 1 10 100
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1
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Junction to Case
1
0.01
TA = 25 °C
V.