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VB20120C Dataheets PDF



Part Number VB20120C
Manufacturers Vishay
Logo Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VB20120C DatasheetVB20120C Datasheet (PDF)

New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262A.

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New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. 1 2 3 VI20120C 2 V20120C PIN 1 PIN 3 PIN 2 CASE 3 1 VF20120C PIN 1 PIN 3 PIN 2 2 3 1 TO-263AB K K TO-262AA 2 1 VB20120C PIN 1 PIN 2 K HEATSINK MECHANICAL DATA www.DataSheet.co.kr PIN 1 PIN 3 PIN 2 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 120 V 120 A 0.64 V 150 °C Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode SYMBOL VRRM IF(AV) IFSM EAS IRRM dV/dt VAC TJ, TSTG V20120C VF20120C VB20120C VI20120C UNIT V A A mJ A V/µs V °C 120 20 10 120 80 0.5 10 000 1500 - 40 to + 150 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR) Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range Document Number: 89040 Revision: 24-Jun-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 mA IF = 5 A IF = 10 A IF = 5 A IF = 10 A VR = 90 V Reverse current per diode (2) VR = 120 V Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms TA = 25 °C TA = 25 °C VF TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VBR TYP. 120 (minimum) 0.62 0.81 0.54 0.64 8 6 IR 14 MAX. 0.90 V 0.72 700 45 µA mA µA mA UNIT V Instantaneous forward voltage per diode (1) THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RθJC V20120C 2.8 VF20120C 5.0 VB20120C 2.8 VI20120C 2.8 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-262AA PREFERRED P/N V20120C-E3/4W VF20120C-E3/4W VB20120C-E3/4W VB20120C-E3/8W VI20120C-E3/4W UNIT WEIGHT (g) 1.88 1.75 1.37 1.37 1.45 PACKAGE CODE www.DataSheet.co.kr BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube DELIVERY MODE Tube Tube Tube Tape and reel Tube 4W 4W 4W 8W 4W RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 25 10 Resistive or Inductive Load V(B,I)20120C D = 0.5 D = 0.3 6 D = 0.2 4 D = 0.1 T 2 D = tp/T 0 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 tp D = 1.0 D = 0.8 Average Forward Rectified Current (A) 15 VF20120C 10 5 Mounted on Specific Heatsink 0 Average Power Loss (W) 20 8 Case Temperature (°C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89040 Revision: 24-Jun-09 Datasheet pdf - http://www.DataSheet4U.net/ New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor 100 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) Junction to Case TA = 150 °C TA = 125 °C TA = 100 °C 10 1 TA = 25 °C V(B,I)20120C 1 0.01 0.1 1 10 100 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode 100 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 www.DataSheet.co.kr Junction to Case 1 0.01 TA = 25 °C V.


VF20120C VB20120C VI20120C


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