V10PL45

V10PL45 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V at IF = 5 A FEATURES TMBS® K eSMP® Series Very low profile - typical height of 1.1 mm Ideal for automated placement Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Compliant to RoHS Directive 2011/65/EU Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 10 A 45 V 200 A 0.35 V 150 °C MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade www.DataSheet.co.kr Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range (AC mode) Notes (1) Mounted on 30 mm x 30 mm pad areas aluminum PCB (2) Free air, mounted on recommended coppe...