isc Silicon PNP Power Transistor
BDX92/94/96
DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Breakdown Vol...
isc Silicon
PNP Power
Transistor
BDX92/94/96
DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -60V(Min)- BDX92 -80V(Min)- BDX94 -100V(Min)- BDX96
·Complement to Type BDX91/93/95 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
BDX92
-60
BDX94
-80
V
BDX96
-100
VCEO
Collector-Emitter Voltage
BDX92
-60
BDX94
-80
V
BDX96
-100
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-15
A
90
W
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.94 ℃/W
isc website:www.iscsemi.com
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isc Silicon
PNP Power
Transistor
BDX92/94/96
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDX92 BDX94 BDX96
IC= -30mA ;IB=0
VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 VBE(on)
Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage
ICBO
Collector Cutoff Curre...