MBRP3010N
MBRP3010N
Features
• Low forward voltage drop • High frequency properties and switching speed • Guard ring fo...
MBRP3010N
MBRP3010N
Features
Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection
Applications
Switched mode power supply Freewheeling diodes
1 2 3
TO-220
1. Anode 2.Cathode 3. Anode
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current
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Value 100 100 30 250 -65 to +150 @ TC = 105°C
Units V V A A °C
Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature
Thermal Characteristics
Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 1.7 Units °C/W
Electrical Characteristics (per diode)
Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 15A IF = 15A IF = 30A IF = 30A Maximum Instantaneous Reverse Current @ rated VR Value TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C 0.85 0.67 1.05(TYP.) 0.80 mA 1 20 Units V
IRM *
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
Datasheet pdf - http://www.DataSheet4U.net/
MBRP3010N
Typical Characteristics
100
10
1
Forward Current, I F[A]
Reverse Current, IR[mA]
10
10
0
T J=125 C
o
1
10
-1
T J=75 C
o
TJ=125 C
0.1
o
TJ=75 C TJ=25 C
o
o
10
-2
T J=25 C
o
0.01 0.0
10
-3
...
