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V15P45S Dataheets PDF



Part Number V15P45S
Manufacturers Vishay
Logo Vishay
Description SMD Photovoltaic Solar Cell Protection Schottky Rectifiers
Datasheet V15P45S DatasheetV15P45S Datasheet (PDF)

www.DataSheet.co.kr New Product V15P45S Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Schottky Rectifiers Ultra Low VF = 0.31 V at IF= 5 A FEATURES TMBS® K eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in accordance.

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www.DataSheet.co.kr New Product V15P45S Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Schottky Rectifiers Ultra Low VF = 0.31 V at IF= 5 A FEATURES TMBS® K eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TOP max. 15 A 45 V 210 A 0.42 V 150 °C MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Junction temperature in DC forward current without reverse bias, t  1 h Operating junction temperature range Storage temperature range Notes (1) Mounted on 30 mm x 30 mm aluminum PCB (2) Free air, mounted on recommended copper pad area (3) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test VRRM IF (1) IF (2) IFSM TJ (3) TOP TSTG SYMBOL V15P45S 1545S 45 15 A 4.8 210  200 - 40 to + 150 - 40 to + 175 A °C °C °C V UNIT Document Number: 89343 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr New Product V15P45S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5.0 A IF = 7.5 A Instantaneous forward voltage IF = 15 A IF = 5.0 A IF = 7.5 A IF = 15 A Reverse current VR = 45 V TA = 25 °C TA = 125 °C IR (2) TA = 125 °C TA = 25 °C VF (1) SYMBOL TYP. 0.40 0.45 0.49 0.31 0.34 0.42 15 MAX. 0.58 V 0.51 1500 50 μA mA UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RJA (1) RJM (2) V15P45S 75 °C/W 4 UNIT Notes (1) Free air, mounted on recommended copper pad area; thermal resistance R JA - junction to ambient (2) Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance R JM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N V15P45S-M3/86A V15P45S-M3/87A UNIT WEIGHT (g) 0.10 0.10 PREFERRED PACKAGE CODE 86A 87A BASE QUANTITY 1500 6500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 18 16 TM = 116 °C (1) DC Forward Current (A) 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 TL Measured at the Cathode Band Terminal TA = 25 °C (2) Notes Mounted on 30 mm x 30 mm aluminum PCB; TM measured at the terminal of cathode band (RJM = 4 °C/W) (2) Free air, mounted on recommended copper pad area (RJA = 75 °C/W) (1) TM - Mount Temperature (°C) Fig. 1 - Forward Current Derating Curve www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89343 [email protected], [email protected], [email protected] Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr New Product V15P45S Vishay General Semiconductor 11 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 D = tp/T tp T D = 0.5 D = 0.8 D = 0.3 D = 0.2 D = 0.1 D = 1.0 10 000 Junction Capacitance (pF) Average Power Loss (W) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 0.1 1 10 100 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Transient Thermal Impedance (°C/W) 100 100 Junction to Ambient Instantaneous Forward Current (A) TA = 150 °C 10 TA = 125 °C 10 1 TA = 100 °C 1 TA = 25 °C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteri.


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