SQ3426EEV

www.DataSheet.co.kr SQ3426EEV www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration TSOP-6 Top V iew 1 6 FEATURES 60 0.045 0.066 7 Single (1, 2, 5, 6) D Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Typical ESD Protection 800 V AEC-Q101 Qualifiedc 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC 3 mm 2 5 (3) G 3 4 2.85 mm Marking Code: 8Axxx (4) S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TSOP-6 SQ3426EEV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Currenta L = 0.1 mH TC = 25 °C TC = 125 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 7 4 6 29 10 5 5 1.6 - 55 to + 175 mJ W °C A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. PCB Mountb SYMBOL RthJA RthJF LIMIT 110 30 UNIT °C/W S11-2124-Rev. C, 07-Nov-11 1 Document Number: 65351 THIS DO...