SQ3419EEV

www.DataSheet.co.kr SQ3419EEV www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration TSOP-6 Top V iew 1 6 - 40 0.050 0.078 - 7.4 Single Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Typical ESD Protection 800 V Compliant to RoHS Directive 2002/95/EC (1, 2, 5, 6) D (3) G 3 mm 2 5 3 4 2.85 mm Marking Code: 8Cxxx (4) S P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TSOP-6 SQ3419EEV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction)a Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT - 40 ± 12 - 7.4 - 4.3 - 6.3 - 29 - 20 20 5 1.6 - 55 to + 175 mJ W °C A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PCB Mountc SYMBOL RthJA RthJF LIMIT 110 30 UNIT °C/W S11-2124-Rev. B...