SQ1431EH

www.DataSheet.co.kr SQ1431EH www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration - 30 0.175 0.300 -3 Single FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET AEC-Q101 Qualifiedc 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC S SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code 9E XX G YY Lot Traceability and Date Code D 2 5 D G 3 4 S Part # Code Top View D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SC-70 SQ1431EH-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Currenta L = 0.1 mH TC = 25 °C TC = 125 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT - 30 ± 20 -3 - 1.8 - 3.7 - 12 -6 1.8 3 1 - 55 to + 175 mJ W °C A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. PCB Mountb SYMBOL RthJA RthJF LIMIT 130 50 UNIT °C/W S11-2128 Rev. B, 31-Oct-11 1 Do...