N-Channel Enhancement Mode Field Effect Transistor
Description
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N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 0.3A, RDS(ON) = 6 Ω @VGS = 10V. RDS(ON) = 6 Ω @VGS = 5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92 package.
CEK7002A
PRELIMINARY
D
G
G D S
TO-92
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage...
