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CEK01N6G

Part Number	CEK01N6G
Manufacturer	CET
Description	N-Channel Enhancement Mode Field Effect Transistor
Published	Mar 5, 2012
Detailed Description	www.DataSheet.co.kr N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3 Ω @VGS = 10V. H...
Datasheet	CEK01N6G PDF File

Overview

www.
DataSheet.
co.
kr N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.
3 Ω @VGS = 10V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TO-92(Bulk) & TO-92(Ammopack) package.
CEK01N6G D G G D G S D TO-92(Ammopack) S TO-92(Bulk) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed b TA = 25 C unless otherwise noted Symbol VDS VGS IDa IDM PD TJ,Tstg Limit 600 Units V V A A W C ±30 0.
4 1.
6 3.
1 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junctio...

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