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CEH2310
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 6.2A , RDS(ON) = 33mΩ @VGS...
www.DataSheet.co.kr
CEH2310
N-Channel Enhancement Mode Field Effect
Transistor FEATURES
30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 5 6 3 2 1 TSOP-6 S(4) G(3) 4 D(1,2,5,6,) PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C
±12
6.2 25 2.0 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W
This is preliminary information on a new product in development now . Details are subject to change without notice . 1
Rev 1. 2006.April http://www.cetsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
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CEH2310
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Dr...