Transistors
2SC3315
Silicon NPN epitaxial planar type
For high-frequency amplification
4.0±0.2
2.0±0.2
Unit: mm
15....
Transistors
2SC3315
Silicon
NPN epitaxial planar type
For high-frequency amplification
4.0±0.2
2.0±0.2
Unit: mm
15.6±0.5 (0.8) (0.8) 3.0±0.2 7.6
■ Features
Optimum for high-density mounting Allowing supply with the radial taping
0.75 max.
Optimum for RF amplification of FM/AM radios High transition frequency fT
/ ■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
V
c e. d ty Collector-emitter voltage (Base open) VCEO
20
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
3
V
a e cle con Collector current
IC
15
mA
lifecy , dis Collector power dissipation
PC
300
mW
n u duct typed Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
0.45+–00..1200
(2.5) (2.5)
123
0.45+–00..1200 0.7±0.1
1: Emitter 2: Collector 3: Base NS-B1 Package
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
30
V
tinue anc Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
3
V
M is con inten Base-emitter voltage
VBE VCB = 6 V, IE = −1 mA
720
mV
/Dis ma Forward current transfer ratio *
hFE VCB = 6 V, IE = −1 mA
65
260
D ance type, Transition frequency
fT
VCB = 6 V, IE = −1 mA, f = 200 MHz
450 650
MHz
ten ce Reverse transfer capacitance ain nan (Common emi...