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TO -22 0A B
PSMN5R0-100PS
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
Rev. 3 — 26 September 2011 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 75 A; VDS = 50 V; see Figure 14; see Figure 15 49 170 nC nC
[2]
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -55 -
Typ 7.7
Max Unit 100 120 338 175 9 V A W °C mΩ
Static characteristics
-
4.3
5
mΩ
Avalanche ruggedness EDS(AL)S non-repetitive VGS = 10 V; Tj(init) = 25 °C; drain-source avalanche ID = 120 A; Vsup ≤ 100 V; energy RGS = 50 Ω; Unclamped 537 mJ
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www.DataSheet.co.kr
NXP Semiconductors
PSMN5R0-100PS
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
[1] [2]
Continuous current limited by package Measured 3 mm from package.
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G S
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3. Ordering information Package Name PSMN5R0-100PS TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number
PSMN5R0-100PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
2 of 15
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
NXP Semiconductors
PSMN5R0-100PS
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Tsld(M) IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak soldering temperature source current peak source current non-repetitive drain-source avalanche energy Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; Vsup ≤ 100 V; RGS = 50 Ω; Unclamped
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ VGS = 10 V; Tj = 100 °C; see Figure 1 VGS = 10 V; Tmb = 25 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3 Tmb = 25 °C; see Figure 2
[1]
Min -20 -55 -55 -
Max 100 100 20 110 120 622 338 175 175 260 120 622 537
Unit V V V A A A W °C °C °C A A mJ
Source-drain diode
Avalanche ruggedness
[1]
Continuous current limited by package
200 ID (A) 160
003aaf735
120 Pder (%) 80
03aa16
120
(1)
80
40
40
0 0 50 100 150 Tmb(°C) 200
0 0 50 100 150 Tmb (°C) 200
Fig 1.
Continuous drain current as a function of mounting base temperature
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
PSMN5R0-100PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
3 of 15
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
NXP Semiconductors
PSMN5R0-100PS
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
104 ID (A) 103 Limit RDSon = VDS / ID 102 tp =10 μ s 100 μ s
003aaf734
10 1 ms 10 ms 100 ms DC 1 10 102 103
1
10-1 10-1
V DS (V)
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN5R0-100PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
4 of 15
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
NXP Semiconductors
PSMN5R0-100PS
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 4 vertical in free air Min Typ 0.22 60 Max 0.44 Unit K/W K/W
1 Zth(j-mb) (K/W) d = 0.5 10-1 0.