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PSMN5R0-100PS Dataheets PDF



Part Number PSMN5R0-100PS
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel MOSFET
Datasheet PSMN5R0-100PS DatasheetPSMN5R0-100PS Datasheet (PDF)

w w w . D a t a S h e e t . c o . k r TO -22 0A B PSMN5R0-100PS N-channel 100 V 5 mΩ standard level MOSFET in TO-220 Rev. 3 — 26 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction lo.

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w w w . D a t a S h e e t . c o . k r TO -22 0A B PSMN5R0-100PS N-channel 100 V 5 mΩ standard level MOSFET in TO-220 Rev. 3 — 26 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive sources 1.3 Applications  DC-to-DC converters  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 75 A; VDS = 50 V; see Figure 14; see Figure 15 49 170 nC nC [2] Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 7.7 Max Unit 100 120 338 175 9 V A W °C mΩ Static characteristics - 4.3 5 mΩ Avalanche ruggedness EDS(AL)S non-repetitive VGS = 10 V; Tj(init) = 25 °C; drain-source avalanche ID = 120 A; Vsup ≤ 100 V; energy RGS = 50 Ω; Unclamped 537 mJ D a t a s h e e t p d www.DataSheet.co.kr NXP Semiconductors PSMN5R0-100PS N-channel 100 V 5 mΩ standard level MOSFET in TO-220 [1] [2] Continuous current limited by package Measured 3 mm from package. 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol D G S 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name PSMN5R0-100PS TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number PSMN5R0-100PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 26 September 2011 2 of 15 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NXP Semiconductors PSMN5R0-100PS N-channel 100 V 5 mΩ standard level MOSFET in TO-220 4. Limiting values Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Tsld(M) IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak soldering temperature source current peak source current non-repetitive drain-source avalanche energy Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; Vsup ≤ 100 V; RGS = 50 Ω; Unclamped [1] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ VGS = 10 V; Tj = 100 °C; see Figure 1 VGS = 10 V; Tmb = 25 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3 Tmb = 25 °C; see Figure 2 [1] Min -20 -55 -55 - Max 100 100 20 110 120 622 338 175 175 260 120 622 537 Unit V V V A A A W °C °C °C A A mJ Source-drain diode Avalanche ruggedness [1] Continuous current limited by package 200 ID (A) 160 003aaf735 120 Pder (%) 80 03aa16 120 (1) 80 40 40 0 0 50 100 150 Tmb(°C) 200 0 0 50 100 150 Tmb (°C) 200 Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature PSMN5R0-100PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 26 September 2011 3 of 15 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NXP Semiconductors PSMN5R0-100PS N-channel 100 V 5 mΩ standard level MOSFET in TO-220 104 ID (A) 103 Limit RDSon = VDS / ID 102 tp =10 μ s 100 μ s 003aaf734 10 1 ms 10 ms 100 ms DC 1 10 102 103 1 10-1 10-1 V DS (V) Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN5R0-100PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 26 September 2011 4 of 15 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NXP Semiconductors PSMN5R0-100PS N-channel 100 V 5 mΩ standard level MOSFET in TO-220 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 4 vertical in free air Min Typ 0.22 60 Max 0.44 Unit K/W K/W 1 Zth(j-mb) (K/W) d = 0.5 10-1 0.


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