2SC3313

Transistors 2SC3313 Silicon NPN epitaxial planar type For high-frequency amplification 4.0±0.2 2.0±0.2 Unit: mm 15.6±0.5 (0.8) (0.8) 3.0±0.2 7.6 ■ Features Optimum for high-density mounting Allowing supply with the radial taping 0.75 max. Optimum for RF amplification of FM/AM radios / ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 5 V a e cle con Collector current IC 30 mA lifecy , dis Collector power dissipation PC 300 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C 0.45+–00..1200 (2.5) (2.5) 123 0.45+–00..1200 0.7±0.1 1: Emitter 2: Collector 3: Base NS-B1 Package in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit inc typ Collector-base voltage (Emitter open) c tinued ance Collector-emitter voltage (Base open) M is con inten Emitter-base voltage (Collector open) /Dis ma Forward current transfer ratio * D ance type, Transition frequency ten ce Reverse transfer capacitance ain nan (Common emitter) VCBO VCEO VEBO hFE fT Cre IC = 10 µA, IE = 0 30 IC = 2 mA, IB = 0 20 IE = 10 µA, IC = 0 5 VCB = 10 V, IE = −1 mA 70 VCB = 10 V, IE = −1 mA, f = 200 MHz 150 VCB = 10 V, IE = −1 mA, f = 10.7 MHz ...