PSMN3R0-60PS

www.DataSheet.co.kr PSMN3R0-60PS N-channel 60 V 3.0 mΩ standard level MOSFET Rev. 01 — 23 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for standard level gate drive sources 1.3 Applications „ DC-to-DC convertors „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Symbol Parameter drain current total power dissipation gate-drain charge Min - Typ - Max 60 100 306 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C Dynamic characteristics QGD VGS = 10 V; ID = 80 A; VDS = 12 V; see Figure 13 and 14 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 and 12 28 nC Static characteristics RDSon drain-source on-state resistance 2.4 3 mΩ [1] Continuous current is limited by package. Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NXP Semiconductors PSMN3R0-60PS N-channel 60 V 3.0 mΩ standard level MOSFET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain mb D Simplified outline Graphic symbol G mbb07...