2SC3312

Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 4.0±0.2 2.0±0.2 Unit: mm 15.6±0.5 (0.8) (0.8) 3.0±0.2 7.6 ■ Features 0.75 max. Optimum for high-density mounting Allowing supply with the radial taping Low noise voltage NV ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 60 V c type Collector-emitter voltage (Base open) VCEO 55 V n d ge. ed Emitter-base voltage (Collector open) VEBO 7 V le sta ntinu Collector current IC 100 mA a e cyc isco Peak collector current ICP 200 mA life d, d Collector power dissipation PC 300 mW n u duct type Junction temperature Tj 150 °C te tin Pro ued Storage temperature Tstg −55 to +150 °C 0.45+–00..1200 (2.5) (2.5) 123 0.45+–00..1200 0.7±0.1 1: Emitter 2: Collector 3: Base NS-B1 Package in n es follopwlianngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min Typ Max Unit c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V tinu nan Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 55 V M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V e/D e, m Base-emitter voltage VBE VCE = 1 V, IC = 30 mA 1 V D anc typ Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA inten ance Collector-emitter cutoff ...