N-Channel MOSFET
www.DataSheet.co.kr
FCH25N60N N-Channel MOSFET
FCH25N60N
Features
SupreMOS®
January 2011
tm
N-Channel MOSFET
600V,...
Description
www.DataSheet.co.kr
FCH25N60N N-Channel MOSFET
FCH25N60N
Features
SupreMOS®
January 2011
tm
N-Channel MOSFET
600V, 25A, 0.126Ω Description
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSF ET fits the industry’ s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
RDS(on) = 0.108Ω ( Typ.) at VGS = 10V, ID = 12.5A Ultra Low Gate Charge ( Typ. Qg = 57nC) Low Effective Output Capacitance 100% Avalanche Tested RoHS Compliant
D
G G D S
TO-247
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
VGSS ID EAS EAR IDM Symbol VDSS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation (TC = 25oC) (Note 3) Continuous (TC = 25oC) FCH25N60N 600 ±30 25 16 (Note 1) (Note 2) 75 861 8.3 2.2 20 100 216 1.72 -55 to +150 300 Units V V A A mJ A mJ V/ns W/oC
o o
Pulsed
Continuous (TC = 100oC)
IAR
dv/dt PD TJ, TSTG TL
Derate above 25oC
W
Thermal Characteristics
Symbol RθJC RθCS RθJA
*Drain current limited by maximum junction temperatu...
Similar Datasheet