FCH25N60N

www.DataSheet.co.kr FCH25N60N N-Channel MOSFET FCH25N60N Features SupreMOS® January 2011 tm N-Channel MOSFET 600V, 25A, 0.126Ω Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSF ET fits the industry’ s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. RDS(on) = 0.108Ω ( Typ.) at VGS = 10V, ID = 12.5A Ultra Low Gate Charge ( Typ. Qg = 57nC) Low Effective Output Capacitance 100% Avalanche Tested RoHS Compliant D G G D S TO-247 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* VGSS ID EAS EAR IDM Symbol VDSS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation (TC = 25oC) (Note 3) Continuous (TC = 25oC) FCH25N60N 600 ±30 25 16 (Note 1) (Note 2) 75 861 8.3 2.2 20 100 216 1.72 -55 to +150 300 Units V V A A mJ A mJ V/ns W/oC o o Pulsed Continuous (TC = 100oC) IAR dv/dt PD TJ, TSTG TL Derate above 25oC W Thermal Characteristics Symbol RθJC RθCS RθJA *Drain current limited by maximum junction temperatu...