2SC3183

Ordering number:EN1251A NPN Triple Diffused Planar Silicon Transistor 2SC3183 800V/0.2A Switching Regulator Applications Features · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3183] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions PW≤300µs, Duty Cycle≤10% Tc=25˚C Ratings 900 800 7 0.2 1 25 150 –55 to +150 Unit V V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 VCE(sat) fT Cob VCB=800V, IE=0 VEB=5V, IC=0 VCE=5V, IC=20mA VCE=5V, IC=100mA IC=100mA, IB=20mA VCE=10V, IC=20mA VCB=10V, f=1MHz 10* 8 * : The hFE1 of the 2SC3183 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. 15 10 max 10 10 40* 2.0 Unit µA µA V MHz pF 10 K 20 15 L 30 20 M 40 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support ...