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IPP086N10N3 G IPB083N10N3 G
IPI086N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
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