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Si4634DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.0052 at VGS = 10 V 0.0067 at VGS = 4.5 V ID (A)a 24.5 21.5 nC 21.7 Qg (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS
• Buck Converter • Synchronous Rectifier - Secondary Rectifier • Notebook
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D
D
G
S Ordering Information: Si4634DY-T1-E3 (Lead (Pb)-free) Si4634DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 24.5 19.5 16.3b, c 13.0b, c 70 5.1 2.2b, c 30 45 5.7 3.6 2.5b, c 1.6b, c - 55 to 150 Unit V
Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 39 18 Maximum 50 22 Unit °C/W
Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 74030 S09-0138-Rev. B, 02-Feb-09
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Si4634DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic
b
Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb
Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 10 A VDS = 15 V, ID = 15 A
Min. 30
Typ.
Max.
Unit V
33 - 6.4 1.4 2.6 ± 100 1 10 30 0.0043 0.0055 78 0.0052 0.0067
mV/°C V nA µA A Ω S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta
3150 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 420 166 45.5 21.5 8.0 6.2 0.75 30 15 33 10 14 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 10 33 8 TC = 25 °C IS = 3 A 0.75 30 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 35 20 10 1.5 50 30 55 20 25 20 55 16 5.1 70 1.1 60 70 ns Ω 68 33 nC pF
A V ns nC ns
Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 74030 S09-0138-Rev. B, 02-Feb-09
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Si4634DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70 VGS = 10 thru 4 V 56 ID - Drain Current (A) I D - Drain Current (A) 1.2 1.5
42
0.9 TC = 25 °C 0.6 TC = 125 °C 0.3 TC = - 55 °C
28
14
3V
0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.0075 3800
Transfer Characteristics
Ciss R DS(on) - On-Resistance (Ω) 0.0067 VGS = 4.5 V 0.0059 C - Capacitance (pF) 3040
2280
0.0051 VGS = 10 V 0.0043
1520
760 Crss 0 6
Coss
0.0035 0 14 28 42 56 70
0
12
18
24
30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10 ID = 10 A VGS - Gate-to-Source Voltage (V) 8 RDS(on) - On-Resistance (Normalized) VDS = 10 V 6 VDS = 15 V VDS = 20 V 4 1.5 1.7 ID = 15 A
Capacitance
VGS = 10 V
1.3 VGS .