DatasheetsPDF.com

SI4634DY Dataheets PDF



Part Number SI4634DY
Manufacturers Vishay
Logo Vishay
Description N-Channel MOSFET
Datasheet SI4634DY DatasheetSI4634DY Datasheet (PDF)

www.DataSheet.co.kr Si4634DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0052 at VGS = 10 V 0.0067 at VGS = 4.5 V ID (A)a 24.5 21.5 nC 21.7 Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Buck Converter • Synchronous Rectifier - Secondary Rectifier • Notebook SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D D G S Ordering Information: Si4634DY-T1-E3 (Lead (Pb.

  SI4634DY   SI4634DY


Document
www.DataSheet.co.kr Si4634DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0052 at VGS = 10 V 0.0067 at VGS = 4.5 V ID (A)a 24.5 21.5 nC 21.7 Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Buck Converter • Synchronous Rectifier - Secondary Rectifier • Notebook SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D D G S Ordering Information: Si4634DY-T1-E3 (Lead (Pb)-free) Si4634DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 24.5 19.5 16.3b, c 13.0b, c 70 5.1 2.2b, c 30 45 5.7 3.6 2.5b, c 1.6b, c - 55 to 150 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 39 18 Maximum 50 22 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 74030 S09-0138-Rev. B, 02-Feb-09 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si4634DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 10 A VDS = 15 V, ID = 15 A Min. 30 Typ. Max. Unit V 33 - 6.4 1.4 2.6 ± 100 1 10 30 0.0043 0.0055 78 0.0052 0.0067 mV/°C V nA µA A Ω S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta 3150 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 420 166 45.5 21.5 8.0 6.2 0.75 30 15 33 10 14 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 10 33 8 TC = 25 °C IS = 3 A 0.75 30 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 35 20 10 1.5 50 30 55 20 25 20 55 16 5.1 70 1.1 60 70 ns Ω 68 33 nC pF A V ns nC ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74030 S09-0138-Rev. B, 02-Feb-09 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si4634DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 VGS = 10 thru 4 V 56 ID - Drain Current (A) I D - Drain Current (A) 1.2 1.5 42 0.9 TC = 25 °C 0.6 TC = 125 °C 0.3 TC = - 55 °C 28 14 3V 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.0075 3800 Transfer Characteristics Ciss R DS(on) - On-Resistance (Ω) 0.0067 VGS = 4.5 V 0.0059 C - Capacitance (pF) 3040 2280 0.0051 VGS = 10 V 0.0043 1520 760 Crss 0 6 Coss 0.0035 0 14 28 42 56 70 0 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 10 A VGS - Gate-to-Source Voltage (V) 8 RDS(on) - On-Resistance (Normalized) VDS = 10 V 6 VDS = 15 V VDS = 20 V 4 1.5 1.7 ID = 15 A Capacitance VGS = 10 V 1.3 VGS .


SI4630DY SI4634DY SI4654DY


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)