SI4620DY

www.DataSheet.co.kr Si4620DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.035 at VGS = 10 V 0.052 at VGS = 4.5 V ID (A) 7.4 6.1 Qg (Typ.) 4.2 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition LITTLE FOOT® Plus Power MOSFET Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY VKA (V) 30 VF (V) Diode Forward Voltage 0.470 at 3 A IF (A)a 3 APPLICATIONS Load Switch for Portable Applications - Ideal for Boost Circuits HDD Driver SO-8 D K A A S G 1 2 3 4 Top View 8 7 6 5 K K D D G S A Ordering Information: Si4620DY-T1-E3 (Lead (Pb)-free) Si4620DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C Symbol VDS VKA VGS ID IDM IS IF IFM TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 30 30 ± 20 7.5 6 6 4.8 40 2.6 1.7a, b 3 8 3.1 2 2a, b 1.3a, b 3 1.9 1.8 1.1 - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) (MOSFET) Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) A Maximum Power Dissipation (MOSFET) PD W Maximum Power Dissipation (Schottky) Operating Junction and Storage Temper...