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SI4496DY

Part Number	SI4496DY
Manufacturer	Vishay
Description	R-C Thermal Parameters
Published	Feb 11, 2012
Detailed Description	www.DataSheet.co.kr Si4496DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in th...
Datasheet	SI4496DY PDF File

Overview

www.
DataSheet.
co.
kr Si4496DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques.
These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included.
Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPI...

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SI4496DY R-C Thermal Parameters - Vishay

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