DatasheetsPDF.com

VF30150C Dataheets PDF



Part Number VF30150C
Manufacturers Vishay
Logo Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VF30150C DatasheetVF30150C Datasheet (PDF)

www.vishay.com V30150C, VF30150C, VB30150C, VI30150C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V30150C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VF30150C PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB pac.

  VF30150C   VF30150C



Document
www.vishay.com V30150C, VF30150C, VB30150C, VI30150C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V30150C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VF30150C PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VB30150C PIN 1 K 3 2 1 VI30150C PIN 1 PIN 2 PIN 2 HEATSINK PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 150 V 140 A 0.71 V 150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA Diode variation Common cathode MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V30150C Max. repetitive peak reverse voltage Max. average forward rectified current (fig. 1) per device per diode VRRM IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode EAS Peak repetitive reverse current at tp = 2 μs, 1 kHz,  TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR) Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min IRRM dV/dt VAC Operating junction and storage temperature range TJ, TSTG VF30150C VB30150C 150 30 15 VI30150C 140 110 0.5 10 000 1500 - 55 to + 150 UNIT V A A mJ A V/μs V °C Revision: 16-Aug-13 1 Document Number: 89047 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com V30150C, VF30150C, VB30150C, VI30150C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. Breakdown voltage Instantaneous forward voltage per diode (1) IR = 1.0 mA IF = 5 A IF = 7.5 A IF = 15 A IF = 5 A IF = 7.5 A IF = 15 A Reverse current per diode (2) VR = 100 V VR = 150 V TA = 25 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C VBR VF IR 150 (min.) 0.72 0.81 1.11 0.56 0.61 0.71 1.5 2 4 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V30150C VF30150C Typical thermal resistance per diode RJC 2.2 4.5 VI30150C 2.2 MAX. - 1.36 - 0.79 - 200 20 VI30150C 2.2 UNIT V V μA mA μA mA UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) TO-220AB V30150C-E3/4W 1.89 ITO-220AB VF30150C-E3/4W 1.75 TO-263AB VB30150C-E3/4W 1.39 TO-263AB VB30150C-E3/8W 1.39 TO-262AA VI30150C-E3/4W 1.46  RATINGS AND CHARACTERISTICS CURVES  (TA = 25 °C unless otherwise noted) PACKAGE CODE 4W 4W 4W 8W 4W BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube DELIVERY MODE Tube Tube Tube Tape and reel Tube Average Forward Rectified Current (A) Average Power Loss (W) 40 Resistive or Inductive Load 30 V(B,I)30150C 20 VF30150C 10 Mounted on Specific Heatsink 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve 14 D = 0.8 D = 0.5 12 D = 0.3 10 D = 0.2 8 D = 0.1 6 4 D = 1.0 T 2 D = tp/T tp 0 0 2 4 6 8 10 12 14 16 18 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 16-Aug-13 2 Document Number: 89047 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com V30150C, VF30150C, VB30150C, VI30150C Vishay General Semiconductor 100 TA = 150 °C Instantaneous Forward Current (A) 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Instantane.


VI30120SG VF30150C V30150C


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)