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V30150C, VF30150C, VB30150C, VI30150C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.56 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30150C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB K
123 VF30150C
PIN 1
PIN 2
PIN 3
TO-262AA K
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
2 1
VB30150C
PIN 1
K
3 2 1
VI30150C
PIN 1
PIN 2
PIN 2
HEATSINK
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max.
Package
2 x 15 A 150 V 140 A 0.71 V 150 °C
TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variation
Common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V30150C
Max. repetitive peak reverse voltage Max. average forward rectified current (fig. 1)
per device per diode
VRRM IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
EAS
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
IRRM dV/dt VAC
Operating junction and storage temperature range
TJ, TSTG
VF30150C VB30150C 150 30 15
VI30150C
140
110
0.5 10 000 1500 - 55 to + 150
UNIT V A
A
mJ
A V/μs
V °C
Revision: 16-Aug-13
1 Document Number: 89047
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
V30150C, VF30150C, VB30150C, VI30150C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage Instantaneous forward voltage per diode (1)
IR = 1.0 mA IF = 5 A IF = 7.5 A IF = 15 A IF = 5 A IF = 7.5 A IF = 15 A
Reverse current per diode (2)
VR = 100 V VR = 150 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C
VBR VF
IR
150 (min.) 0.72 0.81 1.11 0.56 0.61 0.71 1.5 2 4
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30150C
VF30150C
Typical thermal resistance per diode
RJC
2.2
4.5
VI30150C 2.2
MAX. -
1.36 -
0.79 -
200 20
VI30150C 2.2
UNIT V
V
μA mA μA mA
UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V30150C-E3/4W
1.89
ITO-220AB
VF30150C-E3/4W
1.75
TO-263AB
VB30150C-E3/4W
1.39
TO-263AB
VB30150C-E3/8W
1.39
TO-262AA
VI30150C-E3/4W
1.46
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
PACKAGE CODE 4W 4W 4W 8W 4W
BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube
DELIVERY MODE Tube Tube Tube
Tape and reel Tube
Average Forward Rectified Current (A) Average Power Loss (W)
40 Resistive or Inductive Load
30
V(B,I)30150C
20 VF30150C
10
Mounted on Specific Heatsink 0
0 25 50 75 100 125 150 175 Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
14 D = 0.8
D = 0.5 12 D = 0.3
10 D = 0.2
8 D = 0.1
6
4
D = 1.0 T
2
D = tp/T
tp
0 0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 16-Aug-13
2 Document Number: 89047
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
V30150C, VF30150C, VB30150C, VI30150C
Vishay General Semiconductor
100 TA = 150 °C
Instantaneous Forward Current (A)
10 TA = 125 °C
TA = 100 °C
1 TA = 25 °C
0.1 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Instantane.