VB20120S

www.DataSheet.co.kr New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation 2 V20120S PIN 1 PIN 2 CASE 3 1 VF20120S PIN 1 PIN 2 2 3 Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. 1 PIN 3 PIN 3 TO-263AB K K TO-262AA A NC 1 VB20120S NC A K HEATSINK 2 3 VI20120S PIN 1 PIN 2 K MECHANICAL DATA Case: TO-220AB, TO-262AA ITO-220AB, TO-263AB and PIN 3 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 20 A 120 V 200 A 0.73 V 150 °C Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) Peak forward surge current 8.3 ms single half s...