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VEMD2500X01, VEMD2520X01
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: surface mount
VEMD2520X01 VEMD2500X01
• Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: = ± 15° • Package matched with IR emitter series VSMB2000X01 • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Lead (Pb)-free reflow soldering
16758-11
DESCRIPTION
VEMD2500X01 and VEMD2520X01 are high speed and high sensitive PIN photodiodes in a clear epoxy, miniature surface mount package (SMD) with dome lens. The photo sensitive area of the chip is 0.23 mm2.
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
COMPONENT VEMD2500X01 VEMD2520X01 Ira (μA) 12 12 (deg) ± 15 ± 15 0.1 (nm) 350 to 1120 350 to 1120
Note • Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE VEMD2500X01 VEMD2520X01 Note • MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 6000 pcs, 6000 pcs/reel MOQ: 6000 pcs, 6000 pcs/reel PACKAGE FORM Reverse gullwing Gullwing
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Acc. reflow solder profile fig. 7 Acc. J-STD-051 Tamb 25 °C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 215 100 - 40 to + 100 - 40 to + 100 260 250 UNIT V mW °C °C °C °C K/W
Document Number: 83294 Rev. 1.1, 22-Mar-11
For technical questions, contact:
[email protected]
www.vishay.com 1
Datasheet pdf - http://www.DataSheet4U.net/
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.DataSheet.co.kr
VEMD2500X01, VEMD2520X01
Vishay Semiconductors
Silicon PIN Photodiode
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of Ik Reverse light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Rise time Fall time VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm TEST CONDITION IF = 50 mA IR = 100 μA, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 5 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm, VR = 5 V SYMBOL VF V(BR) Iro CD CD Vo TKVo Ik TKIk Ira p 0.1 tr tf 8.5 32 1 4 1.3 350 - 2.6 11 0.1 12 ± 15 900 350 to 1120 100 100 17 10 MIN. TYP. 1 MAX. UNIT V V nA pF pF mV mV/K μA %/K μA deg nm nm ns ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Ira, rel - Relative Reverse Light Current
1000
1.4
Iro - Reverse Dark Current (nA)
1.2
100
VR = 5 V λ = 950 nm
1.0
10 VR = 10 V 1 20 40 60 80 100
0.8
0.6 0 20 40 60 80 100
94 8427
Tamb - Ambient Temperature (°C)
94 8416
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
www.vishay.com 2
For technical questions, contact:
[email protected]
Document Number: 83294 Rev. 1.1, 22-Mar-11
Datasheet pdf - http://www.DataSheet4U.net/
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.DataSheet.co.kr
VEMD2500X01, VEMD2520X01
Silicon PIN Photodiode
Vishay Semiconductors
0°
10°
20° 30°
100
Ira - Reverse Light Current (µA)
Srel - Relative Sensitivity
10
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80°
1.0
VCE = 5 V λ = 950 nm
0.1 0.01
16055
0.1
1
10
94 8248
0.6
0.4
0.2
0
Ee - Irradiance (mW/cm²)
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
8
CD - Diode Capacitance (pF)
6
E=0 f = 1 MHz
4
2
0 0.1
94 8430
1
10
100
VR- Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
S (λ)rel - Relative Spectral Sensitivity
1.2 1.0 0.8 0.6 0.4 0.2 0 400 500 600 700 800 900 1000 1100
21553
λ - Wavelength (nm)
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Document Number: 83294 Rev. 1.1, 22-Mar-11
For technical questions, contact:
[email protected]
www.vishay.com 3
Datasheet pdf - http://www.DataSheet4U.net/
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS,.