Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Description
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New Product
V80100P
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.425 V at IF = 10 A
FEATURES
TMBS®
Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation
3 2 1
Low thermal resistance Solder dip 260 °C, 40 s Component in a...
