www.vishay.com
V60120C, VB60120C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
...
www.vishay.com
V60120C, VB60120C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.41 V at IF = 5 A
TO-220AB
TMBS ® D2PAK (TO-263AB)
K
3 2 1
V60120C
PIN 1
PIN 2
PIN 3
CASE
2 1
VB60120C
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package
2 x 30 A 120 V 300 A 0.71 V 150 °C
TO-220AB, D2PAK (TO-263AB)
Circuit configuration
Common cathode
FEATURES Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB package) Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB package) Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
MECHANICAL DATA Case: TO-220AB and D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
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