DatasheetsPDF.com

UH10JT Dataheets PDF



Part Number UH10JT
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description High Voltage Ultrafast Rectifier
Datasheet UH10JT DatasheetUH10JT Datasheet (PDF)

www.DataSheet.co.kr New Product UH10JT & UHF10JT Vishay General Semiconductor High Voltage Ultrafast Rectifier FEATURES TO-220AC ITO-220AC • Oxide planar chip junction • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability 2 1 2 1 UH10JT PIN 1 PIN 2 CASE PIN 1 PIN 2 • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high voltage continuous mode .

  UH10JT   UH10JT



Document
www.DataSheet.co.kr New Product UH10JT & UHF10JT Vishay General Semiconductor High Voltage Ultrafast Rectifier FEATURES TO-220AC ITO-220AC • Oxide planar chip junction • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability 2 1 2 1 UH10JT PIN 1 PIN 2 CASE PIN 1 PIN 2 • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high voltage continuous mode power factor correctors (CCM PFC), switching mode power supplies, freewheeling diodes and secondary dc-to-dc rectification application. UHF10JT PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr VF at IF = 10 A TJ max. 10 A 600 V 90 A 25 ns 1.41 V 175 °C MECHANICAL DATA Case: TO-220AC, ITO-220AC Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min Operating junction and storage temperature range SYMBOL VRRM IF(AV) IFSM VAC TJ, TSTG UH10JT 600 10 90 1500 - 55 to + 175 UHF10JT UNIT V A A V °C ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A IF = 10 A IF = 5 A IF = 10 A TA = 25 °C VF TA = 125 °C SYMBOL TYP. 1.70 2.5 1.15 1.41 MAX. 3.0 V 1.80 UNIT Instantaneous forward voltage (1) Document Number: 88998 Revision: 25-Aug-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr New Product UH10JT & UHF10JT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Reverse current (2) TEST CONDITIONS VR = 600 V TA = 25 °C TA = 125 °C SYMBOL IR TYP. 27 trr S IF = 10 A, dI/dt = 200 A/µs, VR = 400 V, TJ = 125 °C IF = 10 A, dI/dt = 80 A/µs, VF = 1.1 x VF max. IRM Qrr tfr 0.45 7.5 200 160 45 A nC ns MAX. 10 150 25 ns UNIT µA Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 1.0 A, dI/dt = 50 A/µs, VR = 30 V, Irr = 0.1 IRM Typical softness factor (tb/ta) Typical reverse recovery c urrent Typical stored charge Typical forward recovery time Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance from junction to case SYMBOL RθJC UH10JT 2.0 UHF10JT 4.0 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AC ITO-220AC PREFERRED P/N UH10JT-E3/4W UHF10JT-E3/45 .


UG4D UH10JT UHF10JT


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)