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UG4A thru UG4D
Vishay General Semiconductor
Miniature Ultrafast Plastic Rectifier
FEATURES
• Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low switching losses, high efficiency • High forward surge capability
DO-201AD
• Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM trr VF TJ max. 4.0 A 50 V to 200 V 150 A 20 ns 0.95 V 150 °C
For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication.
MECHANICAL DATA
Case: DO-201AD Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range SYMBOL VRRM VRMS VDC IF(AV) IFSM TJ, TSTG UG4A 50 35 50 UG4B 100 70 100 4.0 150 - 55 to + 150 UG4C 150 105 150 UG4D 200 140 200 UNIT V V V A A °C
Document Number: 88763 Revision: 23-Oct-09
For technical questions within your region, please contact one of the following:
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www.DataSheet.co.kr
UG4A thru UG4D
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time Typical reverse recovery time IF = 4.0 A TA = 25 °C TA = 100 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 4.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 10 % IRM IF = 4.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 10 % IRM 4.0 V, 1 MHz TJ = 25 °C TJ = 100 °C TJ = 25 °C TJ = 100 °C TEST CONDITIONS SYMBOL VF (1) IR trr trr VALUE 0.95 5.0 μA 300 20 30 ns 50 15 Qrr CJ nC 30 20 pF ns UNIT V
Typical stored charge Typical junction capacitance
Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Typical thermal resistance
(1)
SYMBOL RθJA
(1)
UG4A
UG4B 25
UG4C
UG4D
UNIT °C/W
Note Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length
ORDERING INFORMATION (Example)
PREFERRED P/N UG4D-E3/54 UG4D-E3/73 UNIT WEIGHT (g) 1.138 1.138 PREFERRED PACKAGE CODE 54 73 BASE QUANTITY 1400 1000 DELIVERY MODE 13" diameter paper tape and reel Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless othe.