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UG30CPT Dataheets PDF



Part Number UG30CPT
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description (UG30APT - UG30DPT) Dual Common-Cathode Ultrafast Plastic Rectifier
Datasheet UG30CPT DatasheetUG30CPT Datasheet (PDF)

www.DataSheet.co.kr UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability 3 2 1 • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling .

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www.DataSheet.co.kr UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability 3 2 1 • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. 30 A TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr VF TJ max. 50 V to 200 V 300 A 25 ns 0.85 V 150 °C MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TC = 120 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating and storage temperature range SYMBOL VRRM VRMS VDC IF(AV) IFSM TJ, TSTG UG30APT 50 35 50 UG30BPT 100 70 100 30 300 - 65 to + 150 UG30CPT 150 105 150 UG30DPT 200 140 200 UNIT V V V A A °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode Maximum DC reverse current at rated DC blocking voltage per diode Document Number: 88762 Revision: 05-Jun-08 15 A 30 A 10 A TEST CONDITIONS SYMBOL VF TJ = 100 °C TA = 25 °C TA = 100 °C IR UG30APT UG30BPT UG30CPT UG30DPT UNIT V 1.0 1.15 0.85 15 800 µA For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr UG30APT thru UG30DPT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum reverse recovery time Maximum reverse recovery time Maximum recovered stored charge Typical junction capacitance TEST CONDITIONS IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 15 A, VR = 30 V, dI/dt = 50 A/µs, IRR = 10 % IRM IF = 15 A, VR = 30 V, dI/dt = 50 A/µs, IRR = 10 % IRM 4.0 V, 1 MHz TJ = 25 °C TJ = 100 °C TJ = 25 °C TJ = 100 °C SYMBOL trr UG30APT UG30BPT 25 35 50 22 50 70 UG30CPT UG30DPT UNIT ns trr ns Qrr nC CJ pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode Note: (1) Thermal resistance from junction to case per diode mounted on heatsink (1) SYMBOL RθJC UG30APT UG30BPT UG30CPT UG30DPT UNIT °C/W 2.0 ORDERING INFORMATION (Example) PACKAGE TO-247AD PREFERRED P/N UG30DPT-E3/45 UNIT WEIGHT (g) 6.15 PACKAGE CODE 30 BASE QUANTITY 30/tube DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 36 1000 Average Forward Rectified Current (A) 30 24 18 Peak Forward Surge Current (A) Resistive or Inductive Load TC = 120 °C 8.3 ms Single Half Sine-Wave 100 12 6 0 0 25 50 75 100 125 150 175 10 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Figure 1. Maximum Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88762 Revision: 05-Jun-08 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr UG30APT thru UG30DPT Vishay General Semiconductor 100 60 Instantaneous Forward Current (A) Recovered Store Change/Reverse Recovery Time (nC/ns) IF = 15 A VR = 30 V 50 dI/dt = 150 A/µs dI/dt = 20 A/µs dI/dt = 100 A/µs dI/dt = 50 A/µs dI/dt = 100 A/µs dI/dt = 150 A/µs dI/dt = 50 A/µs dI/dt = 20 A/µs 10 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 40 1 30 20 0.1 10 0.01 0.4 0 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 Instantaneous Forward Voltage (V) Junction Temperature (°C) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Reverse Switching Characteristics Per Diode 1000 100 Instantaneous Reverse Leakage Current (µA) 100 10 TJ = 25 °C Junction Capacitance (pF) TJ = 100 °C 10 1 0.1 TJ = 125 °C f = 1.0 MHz Vsig = 50 mVp-p 1 0.1 1 10 100 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Figure 4. Typical Reverse Leakage Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-247AD (TO-3P) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30° 0.170 (4.3).


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