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UG30APT thru UG30DPT
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Plastic Rectifier
FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
3 2 1
• Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application.
30 A
TO-247AD (TO-3P)
PIN 1 PIN 3 PIN 2 CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM trr VF TJ max. 50 V to 200 V 300 A 25 ns 0.85 V 150 °C
MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TC = 120 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating and storage temperature range SYMBOL VRRM VRMS VDC IF(AV) IFSM TJ, TSTG UG30APT 50 35 50 UG30BPT 100 70 100 30 300 - 65 to + 150 UG30CPT 150 105 150 UG30DPT 200 140 200 UNIT V V V A A °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum instantaneous forward voltage per diode Maximum DC reverse current at rated DC blocking voltage per diode Document Number: 88762 Revision: 05-Jun-08 15 A 30 A 10 A TEST CONDITIONS SYMBOL VF TJ = 100 °C TA = 25 °C TA = 100 °C IR UG30APT UG30BPT UG30CPT UG30DPT UNIT V 1.0 1.15 0.85 15 800
µA
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
www.vishay.com 1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
UG30APT thru UG30DPT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum reverse recovery time Maximum reverse recovery time Maximum recovered stored charge Typical junction capacitance TEST CONDITIONS IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 15 A, VR = 30 V, dI/dt = 50 A/µs, IRR = 10 % IRM IF = 15 A, VR = 30 V, dI/dt = 50 A/µs, IRR = 10 % IRM 4.0 V, 1 MHz TJ = 25 °C TJ = 100 °C TJ = 25 °C TJ = 100 °C SYMBOL trr UG30APT UG30BPT 25 35 50 22 50 70 UG30CPT UG30DPT UNIT ns
trr
ns
Qrr
nC
CJ
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Typical thermal resistance per diode Note: (1) Thermal resistance from junction to case per diode mounted on heatsink
(1)
SYMBOL RθJC
UG30APT
UG30BPT
UG30CPT
UG30DPT
UNIT °C/W
2.0
ORDERING INFORMATION (Example)
PACKAGE TO-247AD PREFERRED P/N UG30DPT-E3/45 UNIT WEIGHT (g) 6.15 PACKAGE CODE 30 BASE QUANTITY 30/tube DELIVERY MODE Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
36 1000
Average Forward Rectified Current (A)
30
24
18
Peak Forward Surge Current (A)
Resistive or Inductive Load
TC = 120 °C 8.3 ms Single Half Sine-Wave
100
12
6
0 0 25 50 75 100 125 150 175
10 1 10 100
Case Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode
www.vishay.com 2
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
Document Number: 88762 Revision: 05-Jun-08
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
UG30APT thru UG30DPT
Vishay General Semiconductor
100
60
Instantaneous Forward Current (A)
Recovered Store Change/Reverse Recovery Time (nC/ns)
IF = 15 A VR = 30 V 50
dI/dt = 150 A/µs dI/dt = 20 A/µs dI/dt = 100 A/µs dI/dt = 50 A/µs dI/dt = 100 A/µs dI/dt = 150 A/µs dI/dt = 50 A/µs dI/dt = 20 A/µs
10 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle
40
1
30
20
0.1
10
0.01 0.4
0 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175
Instantaneous Forward Voltage (V)
Junction Temperature (°C)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Reverse Switching Characteristics Per Diode
1000
100
Instantaneous Reverse Leakage Current (µA)
100
10 TJ = 25 °C
Junction Capacitance (pF)
TJ = 100 °C
10
1
0.1
TJ = 125 °C f = 1.0 MHz Vsig = 50 mVp-p 1 0.1 1 10 100
0.01 0 20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-247AD (TO-3P)
0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30° 0.170 (4.3).