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TSHG5210
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
94 8390
DESCRIPTION TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5
• Leads with stand-off • Peak wavelength: p = 850 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 18 MHz • Good spectral matching with CMOS cameras
• Compliant to RoHS Directive 2002/95/EC and accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
in
• Infrared radiation source for operation with CMOS cameras
• High speed IR data transmission
• Smoke-automatic fire detectors
PRODUCT SUMMARY
COMPONENT TSHG5210
Ie (mW/sr) 230
Note • Test conditions see table “Basic Characteristics”
(deg) ± 10
p (nm) 850
tr (ns) 20
ORDERING INFORMATION
ORDERING CODE TSHG5210
Note • MOQ: minimum order quantity
PACKAGING Bulk
REMARKS MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient
tp/T = 0.5, tp = 100 μs tp = 100 μs
t 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB
VR IF IFM IFSM PV Tj Tamb Tstg Tsd
RthJA
VALUE 5
100 200
1 180 100 - 40 to + 85 - 40 to + 100 260
230
UNIT V mA mA A
mW °C °C °C °C
K/W
Rev. 1.3, 23-Aug-11
1 Document Number: 81810
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TSHG5210
Vishay Semiconductors
PV - Power Dissipation (mW) IF - Forward Current (mA)
200
180
160
140
120 RthJA = 230 K/W 100
80
60
40
20
0 0
21142
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80 RthJA = 230 K/W
60
40
20
0 0
21143
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C)
Fig. 1 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage Temperature coefficient of VF
IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 1 mA
VF VF TKVF
Reverse current Junction capacitance
Radiant intensity
Radiant power Temperature coefficient of e Angle of half intensity
VR = 5 V VR = 0 V, f .