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TSHG5210 Dataheets PDF



Part Number TSHG5210
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description High Speed Infrared Emitting Diode
Datasheet TSHG5210 DatasheetTSHG5210 Datasheet (PDF)

www.vishay.com TSHG5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 94 8390 DESCRIPTION TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: p = 850 nm • High reliability • High radiant power • High radiant int.

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www.vishay.com TSHG5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 94 8390 DESCRIPTION TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: p = 850 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity:  = ± 10° • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 18 MHz • Good spectral matching with CMOS cameras • Compliant to RoHS Directive 2002/95/EC and accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS in • Infrared radiation source for operation with CMOS cameras • High speed IR data transmission • Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT TSHG5210 Ie (mW/sr) 230 Note • Test conditions see table “Basic Characteristics”  (deg) ± 10 p (nm) 850 tr (ns) 20 ORDERING INFORMATION ORDERING CODE TSHG5210 Note • MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient tp/T = 0.5, tp = 100 μs tp = 100 μs t  5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 1 180 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W Rev. 1.3, 23-Aug-11 1 Document Number: 81810 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com TSHG5210 Vishay Semiconductors PV - Power Dissipation (mW) IF - Forward Current (mA) 200 180 160 140 120 RthJA = 230 K/W 100 80 60 40 20 0 0 21142 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 120 100 80 RthJA = 230 K/W 60 40 20 0 0 21143 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 1 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Forward voltage Temperature coefficient of VF IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 1 mA VF VF TKVF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of e Angle of half intensity VR = 5 V VR = 0 V, f .


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