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ST280C04C3LPBF Dataheets PDF



Part Number ST280C04C3LPBF
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Phase Control Thyristors
Datasheet ST280C04C3LPBF DatasheetST280C04C3LPBF Datasheet (PDF)

www.DataSheet.co.kr ST280CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 500 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AB (A-PUK) • Lead (Pb)-free TO-200AB (A-PUK) RoHS COMPLIANT • Designed and qualified for industrial level TYPICAL APPLICATIONS PRODUCT SUMMARY IT(AV) 500 A • DC motor controls • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT.

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www.DataSheet.co.kr ST280CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 500 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AB (A-PUK) • Lead (Pb)-free TO-200AB (A-PUK) RoHS COMPLIANT • Designed and qualified for industrial level TYPICAL APPLICATIONS PRODUCT SUMMARY IT(AV) 500 A • DC motor controls • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS VALUES 500 Ths 55 960 IT(RMS) Ths 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Typical 25 7850 A 8220 308 281 400 to 600 100 - 40 to 125 V µs °C kA2s UNITS A °C A °C I2 t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 06 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 600 VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM PEAK VOLTAGE AT TJ = TJ MAXIMUM V mA 500 700 30 ST280C..C Document Number: 94400 Revision: 11-Aug-08 For technical questions, contact: [email protected] www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ST280CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 500 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side(single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Maximum (typical) latching current I2√t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 500 (185) 55 (85) 960 7850 8220 6600 Sinusoidal half wave, initial TJ = TJ maximum 6900 308 281 218 200 3080 0.84 0.88 0.50 0.47 1.36 600 1000 (300) kA2√s V mΩ V mA kA2s A UNITS A °C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum Ipk = 1050 A, TJ = 125 °C, tp = 10 ms sine pulse TJ = 25 °C, anode supply 12 V resistive load SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs VALUES 1000 1.0 µs 100 UNITS A/µs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 30 UNITS V/µs mA www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94400 Revision: 11-Aug-08 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ST280CPbF Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 500 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TEST CONDITIONS TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum, tp ≤ 5 ms TJ = - 40 °C DC gate current required to trigger IGT TJ = 25 °C TJ = 125 °C TJ = - 40 °C DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 180 90 40 2.9 1.8 1.2 10 VALUES TYP. 10.0 2.0 3.0 20 5.0 150 3.0 mA V mA MAX. UNITS W A V 0.30 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 4.


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