SI7812DN

www.DataSheet.co.kr Si7812DN Vishay Siliconix N-Channel 75-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) 0.037 at VGS = 10 V 0.046 at VGS = 4.5 V ID (A) 16e 16e Qg (Typ.) 8 nC FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile PowerPAK 1212-8 APPLICATIONS 3.30 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 3.30 mm Primary Side Switch D G Bottom View Ordering Information: Si7812DN-T1-E3 (Lead (Pb)-free) Si7812DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 75 ± 20 16e 16e 7.2a, b 5.7a, b 25 16e 3.2a, b 15 11 52 33 3.8a, b 2.4a, b - 55 to 150 260 °C W mJ A Unit V Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the ...