SI7288DP

www.DataSheet.co.kr New Product Si7288DP Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.019 at VGS = 10 V 0.022 at VGS = 4.5 V ID (A) 20 19 Qg (Typ.) 4.9 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Gen III Power MOSFET PWM Optimized 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 APPLICATIONS Backlight Inverter for LCD Displays DC/DC Converter 5.15 mm 6.15 mm S1 1 2 G1 S2 D1 D2 3 4 D1 G2 8 7 D1 D2 G1 6 5 D2 G2 Bottom View Ordering Information: Si7288DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 40 ± 20 20 17 10a, b 8.2a, b 50 13 3.0a, b 10 5 15.6 10 3.6a, b 2.3a, b - 55 to 150 260 Unit V Pulsed Drain Current Source-Drain Current Diode Current Single Pulse Avalanche Current Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typ. 29...