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SI7222DN Dataheets PDF



Part Number SI7222DN
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Dual N-Channel MOSFET
Datasheet SI7222DN DatasheetSI7222DN Datasheet (PDF)

www.DataSheet.co.kr Si7222DN Vishay Siliconix Dual N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.042 at VGS = 10 V 0.047 at VGS = 4.5 V ID (A) 6e 5e Qg (Typ.) 8 nC FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile APPLICATIONS PowerPAK 1212-8 • Primary Side Switch • Synchronus Rectification D1 3.30 mm D2 3.30 mm S1 1 2 G1 S2 3 4 D1 G2 8 7 G1.

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www.DataSheet.co.kr Si7222DN Vishay Siliconix Dual N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.042 at VGS = 10 V 0.047 at VGS = 4.5 V ID (A) 6e 5e Qg (Typ.) 8 nC FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile APPLICATIONS PowerPAK 1212-8 • Primary Side Switch • Synchronus Rectification D1 3.30 mm D2 3.30 mm S1 1 2 G1 S2 3 4 D1 G2 8 7 G1 D1 D2 G2 6 5 D2 Bottom View S1 N-Channel MOSFET S2 N-Channel MOSFET Ordering Information: Si7222DN-T1-E3 (Lead (Pb)-free) Si7222DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg PD TC = 25 °C TA = 25 °C IDM IS IAS EAS ID Symbol VDS VGS Limit 40 ± 12 6e 5e 5.7a, b 4.3a, b 24 6e 2.0a, b 13 8.5 17.8 11.4 2.5a, b 1.6a, b - 55 to 150 260 °C W mJ A Unit V Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 73439 S-83052-Rev. B, 29-Dec-08 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si7222DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a, b Symbol t ≤ 10 s Steady State RthJA RthJC Typical 38 5.5 Maximum 50 7 Unit °C/W Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 94 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 20 V, RL = .


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