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Si7115DN
Vishay Siliconix
P-Channel 150 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) - 150 RDS(on) () 0.295 at VGS = - 10 V 0.315 at VGS = - 6 V ID (A) - 8.9e - 8.6e Qg (Typ.) 23.2 nC
PowerPAK 1212-8
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1 mm Profile • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
3.30 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
3.30 mm
• Active Clamp in Intermediate DC/DC Power Supplies • H-Bridge High Side Switch for Lighting Application
S
G
Bottom View Ordering Information: Si7115DN-T1-E3 (Lead (Pb)-free) Si7115DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET D
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
c, d
Symbol VDS VGS
Continuous Drain Current (TJ = 150 °C)
ID
Limit - 150 ± 20 - 8.9 - 7.1 - 2.3a, b - 1.9a, b - 15 - 13 - 3a, b 15 11.25 52 33 3.7a, b 2.4a, b - 50 to 150 260
Unit V
Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy
IDM IS IAS EAS
A
mJ
Maximum Power Dissipation
PD
W
°C Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Based on TC = 25 °C.
Operating Junction and Storage Temperature Range
TJ, Tstg
Document Number: 73864 S11-1908-Rev. C, 26-Sep-11
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Datasheet pdf - http://www.DataSheet4U.net/
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Si7115DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 81 °C/W. t 10 s Steady State Symbol RthJA RthJC Typical 26 1.9 Maximum 33 2.4 Unit °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage
a
Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb
Test Conditions VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 20 V VDS = - 150 V, VGS = 0 V VDS = - 150 V, VGS = 0 V, TJ = 55 °C VDS - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 4 A VGS = - 6 V, ID = - 3 A VDS = - 15 V, ID = 4 A
Min. - 150
Typ.
Max.
Unit V
- 165 - 6.6 -2 -4 ± 100 -1 - 10 -8 0.245 0.260 12 1190 0.295 0.315
mV/°C V nA µA A S
VDS = - 50 V, VGS = 0 V, f = 1 MHz VDS = - 75 V, VGS = - 10 V, ID = - 3 A VDS = - 75 V, VGS = - 6 V, ID = - 3 A f = 1 MHz VDD = - 75 V, RL = 25 ID - 3 A, VGEN = - 6 V, Rg = 1 1.3
61 42 27.5 23.2 5.4 8.4 6.1 20 95 38 34 11 9.2 30 145 60 51 18 42 78 53 - 13 - 15 - 0.8 65 180 45 20 - 1.2 90 270 42 35
pF
nC
ns
VDD = - 75 V, RL = 25 ID - 3 A, VGEN = - 10 V, Rg = 1
28 52 35
TC = 25 °C IS = - 3 A
A V ns nC ns
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time
IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.