SI6466ADQ

www.DataSheet.co.kr Si6466ADQ Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.014 at VGS = 4.5 V 0.020 at VGS = 2.5 V ID (A) 8.1 6.6 FEATURES Halogen-free TrenchFET® Power MOSFETs 100 % Rg Tested RoHS COMPLIANT D TSSOP-8 D S S G 1 2 3 4 Top View Ordering Information: Si6466ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 D 7 S 6 S 5 D S* N-Channel MOSFET G * Source Pins 2, 3, 6 and 7 must be tied common. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 1.35 1.5 1.0 - 55 to 150 8.1 6.6 30 0.95 1.05 0.67 W °C 10 s 20 ±8 6.8 5.4 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 65 100 43 Maximum 83 120 52 °C/W Unit Document Number: 71182 S-80682-Rev. C, 31-Mar-08 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si6466ADQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-Stat...