SI5908DC

www.DataSheet.co.kr Si5908DC New Product Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) 0.040 @ VGS = 4.5 V 0.045 @ VGS = 2.5 V 0.052 @ VGS = 1.8 V ID (A) 5.9 5.6 5.2 D TrenchFETr Power MOSFETS D Ultra Low rDS(on) and Excellent Power Handling In Compact Footprint APPLICATIONS D Load Switch D PA Switch D Battery Switch D1 D2 1206-8 ChipFETr 1 S1 D1 D1 D2 D2 G1 S2 G2 Marking Code CC XXX Lot Traceability and Date Code G1 G2 Bottom View Part # Code S1 N-Channel MOSFET S2 N-Channel MOSFET Ordering Information: Si5908DC-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS 5 secs Steady State 20 8 Unit V 5.9 ID IDM IS PD TJ, Tstg 1.8 2.1 1.1 --55 to 150 260 4.2 20 4.4 3.1 A 0.9 1.1 0.6 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 30 Maximum 60 110 40 Unit _C/ C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is expo...