SI5902BDC

www.DataSheet.co.kr Si5902BDC Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.065 at VGS = 10 V 0.100 at VGS = 4.5 V ID (A) 4a 4a Qg (Typ.) 2 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC APPLICATIONS 1206-8 ChipFET® (Dual) 1 S1 D1 D1 D2 D2 G1 S2 G2 Load Switch for Portable Applications DC/DC Converter D1 D2 Marking Code CE XXX G1 Lot Traceability and Date Code S1 N-Channel MOSFET G2 Bottom View Part # Code S2 N-Channel MOSFET Ordering Information: Si5902BDC-T1-E3 (Lead (Pb)-free) Si5902BDC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS Limit 30 ± 20 4a 3.8a 3.7b, c 2.6b, c 10 2.6 1.3b, c 3.12 2.0 1.5b, c 0.8b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t≤5s 70 85 Maximum Junction-to-Ambientb, f °C/W 33 40 Maximum Junction-to-Foot (Drain) Steady State RthJF Notes: a. Package limited. b. Surface mo...